850nm Near Infrared(NIR) VCSEL Laser Diode Chip

Healthcare, Beauty and Skin Treatment, Consumer Electronics, LLLT, PBMT, Wearable Pulse Oximetry,Hair Removal, Laser Facial, Skin Rejuvenation, Proximity Sensing, AR/VR Sensor, Facial Recognition

850nm/5mW/7Mil

PN:D-V0850M-0005-0007

Threshold Current:TYP. 0.9mA
VF:Typ. 2.1V(IF=7mA)
VF:Typ. 1.8V(IF=3mA)
Output Power:
Typ. 6mW(IF=7mA)
Typ. 2mW(IF=3mA)
Wavelength:840nm-860nm
PCE:41%
Angle:20 deg

Die Size:170μm*170μm
Die Thickness:130μm
Number of Emitters:1
Bond Pad Size:90μm

Suitable for pulse power applications and the power is 5mW
25 ℃,QCW Mode (pulse length 1ms, 10% Duty Cycle )

850nm/20mW/7Mil

PN:D-V0850M-0020-0007

Threshold Current:TYP. 5.5mA
VF:Typ. 2.0V(IF=28mA)
Output Power:Typ. 23mW
Wavelength:840nm-860nm
PCE:41%
Angle:21 deg

Die Size:170μm*170μm
Die Thickness:130μm
Number of Emitters:4
Bond Pad Size:87μm*85μm

Suitable for pulse power applications and the power is 20mW
25 ℃,QCW Mode (pulse length 0.5ms, 10% Duty Cycle )

850nm/30mW/7Mil

D-V0850M-0030-0007

Threshold Current:TYP. 8mA
VF:Typ. 2.05V(IF=42mA)
Output Power:Typ. 34mW
Wavelength:840nm-860nm
PCE:41%
Angle:20 deg

Die Size:163μm*185μm
Die Thickness:130μm
Number of Emitters:6
Bond Pad Size:115μm*80μm

Suitable for pulse power applications and the power is 30mW
25 ℃,QCW Mode (pulse length 1ms, 10% Duty Cycle )

850nm/70mW

PN:D-V0850M-0070-0818

Threshold Current:TYP. 14mA
VF:Typ. 2.0V(IF=84mA)
Output Power:Typ. 70mW
Wavelength:840nm-860nm
PCE:44%
Angle:20 deg

Die Size:455μm*200μm
Die Thickness:130μm
Number of Emitters:12
Emitting Aperture:10μm
Bond Pad Size:422μm*108μm

Suitable for pulse power applications and the power is 70mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )

850nm/100mW/10Mil

PN:D-V0850M-0100-0010

Threshold Current:TYP. 26mA
VF:Typ. 2.05V(IF=140mA)
Output Power:Typ. 115mW
Wavelength:840nm-860nm
PCE:40%
Angle:20 deg

Die Size:245μm*239μm
Die Thickness:100μm
Number of Emitters:23
Bond Pad Size:96μm*100μm

Suitable for pulse power applications and the power is 100mW
25 ℃,QCW Mode (pulse length 1ms, 10% Duty Cycle )

850nm/100mW/13Mil

PN:D-V0850M-0100-0013

Threshold Current:TYP. 25mA
VF:Typ. 2.1V(IF=140mA)
Output Power:Typ. 120mW
Wavelength:840nm-860nm
PCE:40%
Angle:20 deg

Die Size:300μm*300μm
Die Thickness:130μm
Number of Emitters:21
Bond Pad Size:96μm*105μm

Suitable for pulse power applications and the power is 100mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )

850nm/100mW

PN:D-V0850M-0100-0832

Threshold Current:TYP. 25mA
VF:Typ. 2.0V(IF=140mA)
Output Power:Typ. 120mW
Wavelength:840nm-860nm
PCE:43%
Angle:20 deg

Die Size:785μm*200μm
Die Thickness:130μm
Number of Emitters:22
Emitting Aperture:10μm
Bond Pad Size:752μm*108μm

Suitable for pulse power applications and the power is 100mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )

850nm/200mW

PN:D-V0850M-0200-0836

Threshold Current:TYP. 50mA
VF:Typ. 2.1V(IF=280mA)
Output Power:Typ. 240mW
Wavelength:840nm-860nm
PCE:42%
Angle:22 deg

Die Size:895μm*200μm
Die Thickness:130μm
Number of Emitters:22
Emitting Aperture:15μm
Bond Pad Size:862μm*105μm

Suitable for pulse power applications and the power is 200mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )

850nm/300mW/14Mil

PN:D-V0850M-0300-0014

Threshold Current:TYP. 14mA
VF:Typ. 2.0V(IF=350mA)
Output Power:Typ. 70mW
Wavelength:840nm-860nm
PCE:44%
Angle:20 deg

Die Size:445μm*200μm
Die Thickness:130μm
Number of Emitters:12
Emitting Aperture:10μm
Bond Pad Size:422μm*108μm

Suitable for pulse power applications and the power is 70mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )

850nm/400mW

PN:D-V0850M-0400-0841

Threshold Current:TYP. 70mA
VF:Typ. 2.25V(IF=500mA)
Output Power:Typ. 450mW
Wavelength:840nm-860nm
PCE:40%
Angle:25 deg

Die Size:1005μm*230μm
Die Thickness:130μm
Number of Emitters:22
Emitting Aperture:20μm
Bond Pad Size:972μm*114μm

Suitable for pulse power applications and the power is 400mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )

850nm/500mW/23Mil

PN:D-V0850M-0500-0023

Threshold Current:TYP. 120mA
VF:Typ. 2.1V(IF=0.7A)
Output Power:Typ. 580mW
Wavelength:840nm-860nm
PCE:40%
Angle:20 deg

Die Size:575μm*555μm
Die Thickness:150μm
Number of Emitters:95
Bond Pad Size:520μm*100μm

Suitable for pulse power applications and the power is 500mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )

850nm/1W/29Mil/CW

PN:D-V0850M-1000-0029

Threshold Current:TYP. 250mA
VF:Typ. 2.2V(IF=1.4A)
Output Power:Typ. 1200mW
Wavelength:840nm-860nm
PCE:39%
Angle:21 deg

Die Size:7755μm*670μm
Die Thickness:150μm
Number of Emitters:201
Bond Pad Size:645μm*100μm

Suitable for pulse power applications and the power is 1W
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )

850nm/1.5W/34Mil

PN:D-V0850M-1500-0034

Threshold Current:TYP. 340mA
VF:Typ. 2.2V(IF=2A)
Output Power:Typ. 1700mW
Wavelength:840nm-860nm
PCE:38%
Angle:20 deg

Die Size:855μm*810μm
Die Thickness:150μm
Number of Emitters:280
Bond Pad Size:95μm*830μm

Suitable for pulse power applications and the power is 1.5W
25 ℃,QCW Mode (pulse length 0.1ms, 1% Duty Cycle )

850nm/2W/40Mil

PN:D-V0850M-2000-0040

Threshold Current:TYP. 550mA
VF:Typ. 2.2V(IF=2.8A)
Output Power:Typ. 2.2W
Wavelength:840nm-860nm
PCE:39%
Angle:21 deg

Die Size:855μm*810μm
Die Thickness:150μm
Number of Emitters:280
Bond Pad Size:95μm*830μm

Suitable for pulse power applications and the power is 2W
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )

850nm/2W/42Mil/CW

PN:D-V0850M-2000-0042

Threshold Current:TYP. 400mA
VF:Typ. 2.3V(IF=2.2A)
Output Power:Typ. 2.1W
Wavelength:840nm-860nm
PCE:43%
Angle:22 deg

Die Size:1080μm*1050μm
Die Thickness:110μm
Bond Pad Size:1014μm*98μm

Suitable for applications which require the CW operation with the power being
around 2 W.

850nm/3W/43Mil

PN:D-V0850M-3000-0043

Threshold Current:TYP. 680mA
VF:Typ. 2.3V(IF=4A)
Output Power:Typ. 3.5W
Wavelength:840nm-860nm
PCE:37%
Angle:21 deg

Die Size:1075μm*1120μm
Die Thickness:150μm
Number of Emitters:624
Bond Pad Size:100μm*1060μm*2

Suitable for pulse power applications and the power is 3W
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )

850nm/6W/56Mil

PN:D-V0850M-6000-0056

Threshold Current:TYP. 1500mA
VF:Typ. 2.2V(IF=2.8A)
Output Power:5w-6W
Wavelength:840nm-860nm
PCE:38%
Angle:19 deg

Die Size:1340μm*1500μm
Die Thickness:150μm
Number of Emitters:1273
Bond Pad Size:1180μm*105μm

Suitable for pulse power applications and the power is 6W
25 ℃,QCW Mode (pulse length 0.1ms, 3% Duty Cycle )