PN:D-V0808M-0005-0007
Suitable for pulse power applications and the power is 5mW
Threshold Current:Min.:0.9, Typ.:1.2, Max:2 mA
VF:2.0 V Typ.
Slop Efficiency:1.1 W/A
Output Power: 5.5-6.0 mW
PCE:43-46 %
Wavelength:800-816 nm
Angle:18-24 deg
At 25 deg.QCW  (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:170±10μm x 170±10μm
Die Thickness: 130±10μm
Number of Emitters：1
Bond Pad Size（Anode Pad): 90±5μm
Back Electrode Size（Cathode Pad）:170±10μm x 170±10μm

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0030-0007

Suitable for pulse power applications and the power is 30mW
Threshold Current:Typ.:6.8, Max:8 mA
VF:2.3 V Typ.
Slop Efficiency:1 W/A
Output Power:30-38 mW
PCE:38-40 %
Wavelength:800-816 nm
Angle:18-24 deg
At 25 deg.QCW  (Pulse Width 0.5ms, 10% Duty Cycle )
Die size:163±10μm x 185±10μm
Die Thickness: 130±10μm
Number of Emitters：6
Bond Pad Size（Anode Pad): 115±3μm x 80±3μm
Back Electrode Size（Cathode Pad）:163±10μm x 185±10μm

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0070-0818
Suitable for pulse power applications and the power is 70mW
Threshold Current:Typ.:6.8, Max:19 mA
VF:2.2 V Typ.
Slop Efficiency:1.1 W/A
Output Power:70-80 mW
PCE:39-41 %
Wavelength:800-816 nm
Angle:18-24 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:455±10μm x 200±10μm
Die Thickness: 130±10μm
Number of Emitters：12
Bond Pad Size（Anode Pad): 422±3μm x 108±3μm
Back Electrode Size（Cathode Pad）:455±10μm x 200±10μm

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*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0100-0832
Suitable for pulse power applications and the power is 100mW
Threshold Current:Typ.:30, Max:35 mA
VF:2.2 V Typ.
Slop Efficiency:1.1 W/A
Output Power:110-130 mW
PCE:39-42 %
Wavelength:800-816 nm
Angle:22-28 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:785±10μm x 200±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Bond Pad Size（Anode Pad): 752±5μm x 108±5μm
Back Electrode Size（Cathode Pad）:785±10μm x 200±10μm

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0100-0840
Suitable for pulse power applications and the power is 100mW
Threshold Current:Typ.:25, Max:35 mA
VF:2.1 V Typ.
Slop Efficiency:1.1 W/A
Output Power:110-125 mW
PCE:39-42 %
Wavelength:798-818 nm
Angle:21-27 deg
At 25 deg.QCW  (Pulse Width 1ms, 10% Duty Cycle )
Die size:200±10μm x 980±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Bond Pad Size（Anode Pad): 100±3μm x 160±3μm
Back Electrode Size（Cathode Pad）:200±10μm x 980±10μm
 

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0200-0836
Suitable for pulse power applications and the power is 200mW
Threshold Current:Typ.:60, Max:65 mA
VF:2.2 V Typ.
Slop Efficiency:1.05 W/A
Output Power:230-260 mW
PCE:37-40 %
Wavelength:800-816 nm
Angle:22-28 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:895±10μm x 200±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Emitting Aperture: 151±1μm
Bond Pad Size（Anode Pad): 862±5μm x 105±5μm
Back Electrode Size（Cathode Pad）:895±10μm x 200±10μm
 

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0400-0841
Suitable for pulse power applications and the power is 400mW
Threshold Current:Typ.:90, Max:100 mA
VF:2.5 V Typ.
Slop Efficiency:1.05 W/A
Output Power:420-460 mW
PCE:34-37 %
Wavelength:800-816 nm
Angle:30-35 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:1005±10μm x 230±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Emitting Aperture: 20±1μm
Bond Pad Size（Anode Pad): 972±5μm x 114±5μm
Back Electrode Size（Cathode Pad）:1005±10μm x 230±10μm

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-0500-0941
Suitable for pulse power applications and the power is 500mW
Threshold Current:Typ.:55, Max:65 mA
VF:2.4 V Typ.
Slop Efficiency:1 W/A
Output Power:500-600 mW
PCE:32-35 %
Wavelength:800-820 nm
Angle:30-34 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:1035±10μm x 225±10μm
Die Thickness: 150±10μm
Number of Emitters：23
Bond Pad Size（Anode Pad): 1000±5μm x 140±5μm
Back Electrode Size（Cathode Pad）:1035±10μm x 225±10μm
 

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-1500-0034
Suitable for pulse power applications and the power is 1.5W
Threshold Current:Typ.:350, Max:400 mA
VF:2.2 V Typ.
Slop Efficiency:1.1 W/A
Output Power:1700-1850 mW
PCE:40-42 %
Wavelength:800-820 nm
Angle:22-26 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 3% Duty Cycle )
Die size:855±10μm x 810±10μm
Die Thickness: 150±10μm
Number of Emitters：280
Bond Pad Size（Anode Pad): 95±5μm x 830±5μm
Back Electrode Size（Cathode Pad）:855±10μm x 810±10μm

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-2000-0040
Suitable for pulse power applications and the power is 2W
Threshold Current:Typ.:600, Max:700 mA
VF:2.2 V Typ.
Slop Efficiency:1.05 W/A
Output Power:2-3 W
PCE:37-39 %
Wavelength:798-818 nm
Angle:2-27 deg
At 25 deg.QCW  (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:955±10μm x 1020±10μm
Die Thickness: 150±10μm
Number of Emitters：410
Emitter Aperture: 10μm
Emitter Pitch: 44μm
Bond Pad Size（Anode Pad): 100μm x 855μm x 2

*Customized key parameters are available, please feel free contact us.

PN:D-V0808M-3000-0043
Suitable for pulse power applications and the power is 3W
Threshold Current:Typ.:690 mA
VF:2.2 V Typ.
Slop Efficiency:1.1 W/A
Output Power:3.2-3.6 mW
PCE:41 %
Wavelength:798-818 nm
Angle:17-23 deg
At 25 deg.QCW  (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:1075±10μm x 1120±10μm
Die Thickness: 150±10μm
Number of Emitters：624
Bond Pad Size（Anode Pad): 100±10μm x 1060±10μm x 2
Back Electrode Size（Cathode Pad）:1075±10μm x 1120±10μm

*Customized key parameters are available, please feel free contact us.