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810nm,1W Infrared(IR) VCSEL Laser Die
810nm/1W/29mil/Die*
PN:D-V0810M-1000-0029
Suitable for CW power applications and the power is 1W
Threshold Current:Min.:180, Typ.:210, Max:250 mA
VF:2.2 V Typ.
Slop Efficiency:1.1 W/A
Output Power: 850-920 mW
PCE:40-44 %
Wavelength:800-820 nm
Angle:18-24 deg
Die size:725±10μm x 725±10μm
Die Thickness: 100±10μm
Number of Emitters:225
Bond Pad Size(Anode Pad): 650±5μm x 105±5μm
Back Electrode Size(Cathode Pad):725±10μm x 725±10μm
*Customized key parameters are available, please feel free contact us.
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