850nm Series,Infrared(IR) VCSEL Laser Die
850nm/5mW/7mil/Die*
PN:D-V0850M-0005-0007
Suitable for pulse power applications and the power is 5 mW
Threshold Current:Min.:0.7, Typ.:1.3, Max:2 mA
VF:2.0 V Typ.
Slop Efficiency:1 W/A
Output Power: 5-6 mW
PCE:39-41 %
Wavelength:840-860 nm
Angle:17-23 deg
At 25 deg.QCW (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:170±10μm x 170±10μm
Die Thickness: 130±10μm
Number of Emitters：1
Bond Pad Size（Anode Pad): 90±5μm
Back Electrode Size（Cathode Pad）:170±10μm x 170±10μm
*Customized key parameters are available, please feel free contact us.
850nm/20mW/7mil/Die
PN:D-V0850M-0005-0007
Suitable for pulse power applications and the power is 20 mW
Threshold Current:Min.:4, Typ.:5.5, Max:7 mA
VF:2.0 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 20-23 mW
PCE:38-41 %
Wavelength:840-860 nm
Angle:18-23 deg
At 25 deg.QCW (Pulse Width 0.5ms, 10% Duty Cycle )
Die size:170±10μm x 170±10μm
Die Thickness: 130±10μm
Number of Emitters：4
Bond Pad Size（Anode Pad): 87±3μm x 87±3μm
Back Electrode Size（Cathode Pad）:170±10μm x 170±10μm
*Customized key parameters are available, please feel free contact us.
850nm/30mW/7mil/Die
PN:D-V0850M-0030-0007
Suitable for pulse power applications and the power is 30 mW
Threshold Current:Min.:6, Typ.:8 mA
VF:2.05 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 30-34 mW
PCE:39-41 %
Wavelength:840-860 nm
Angle:18-23 deg
At 25 deg.QCW (Pulse Width 1ms, 10% Duty Cycle )
Die size:163±10μm x 185±10μm
Die Thickness: 130±10μm
Number of Emitters：6
Bond Pad Size（Anode Pad): 115±3μm x 80±3μm
Back Electrode Size（Cathode Pad）:163±10μm x 185±10μm
*Customized key parameters are available, please feel free contact us.
850nm/70mW/0818/Die
PN:D-V0850M-0070-0818
Suitable for pulse power applications and the power is 70 mW
Threshold Current:Min.:11, Typ.:14, Max:18 mA
VF:2.0 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 65-80 mW
PCE:40-47 %
Wavelength:840-860 nm
Angle:19-22 deg
At 25 deg.QCW (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:455±10μm x 200±10μm
Die Thickness: 130±10μm
Number of Emitters：12
Bond Pad Size（Anode Pad): 422±5μm x 108±5μm
Back Electrode Size（Cathode Pad）:455±10μm x 200±10μm
*Customized key parameters are available, please feel free contact us.
850nm/70mW/0822/Die
PN:D-V0850M-0070-0822
Suitable for pulse power applications and the power is 70 mW
Threshold Current:Typ.:13, Max:16 mA
VF:2.1 V Typ.
Slop Efficiency:1 W/A
Output Power: 65-73 mW
PCE:39-41 %
Wavelength:840-860 nm
Angle:17-23 deg
At 25 deg.QCW (Pulse Width 1ms, 10% Duty Cycle )
Die size:560±10μm x 180±10μm
Die Thickness: 130±10μm
Number of Emitters：12
Bond Pad Size（Anode Pad): 92±5μm x 1745±5μm
Back Electrode Size（Cathode Pad）:560±10μm x 180±10μm
*Customized key parameters are available, please feel free contact us.
850nm/100mW/0832/Die
PN:D-V0850M-0100-0832
Suitable for pulse power applications and the power is 100 mW
Threshold Current:Min.:20, Typ.:25, Max:30 mA
VF:2.0 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 110-130 mW
PCE:40-46 %
Wavelength:840-860 nm
Angle:19-22 deg
At 25 deg.QCW (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:785±10μm x 200±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Bond Pad Size（Anode Pad): 752±5μm x 108±5μm
Back Electrode Size（Cathode Pad）:785±10μm x 200±10μm
*Customized key parameters are available, please feel free contact us.
850nm/100mW/0840/Die
PN:D-V0850M-0100-0840
Suitable for pulse power applications and the power is 100-200 mW
Threshold Current:Min.:Typ.:25, Max:30 mA
VF:2.4 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 160-180 mW
PCE:40-46 %
Wavelength:840-860 nm
Angle:19-25 deg
At 25 deg.QCW (Pulse Width 0.1ms, 1% Duty Cycle )
Die size:200±10μm x 980±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Bond Pad Size（Anode Pad): 100±3μm x 160±3μm
Back Electrode Size（Cathode Pad）:200±10μm x 980±10μm
*Customized key parameters are available, please feel free contact us.
850nm/100mW/10mil/Die
PN:D-V0850M-0100-0010
Suitable for pulse power applications and the power is 100 mW
Threshold Current:Min.:Typ.:25, Max:35 mA
VF:2.05 V Typ.
Slop Efficiency:1 W/A
Output Power: 100-115 mW
PCE:38-40 %
Wavelength:840-860 nm
Angle:18-23 deg
At 25 deg.QCW (Pulse Width 1ms, 10% Duty Cycle )
Die size:245±10μm x 239±10μm
Die Thickness: 130±10μm
Number of Emitters：23
Bond Pad Size（Anode Pad): 96±5μm x 100±5μm
Back Electrode Size（Cathode Pad）:245±10μm x 239±10μm
*Customized key parameters are available, please feel free contact us.
850nm/100mW/13mil/Die
PN:D-V0850M-0100-0013
Suitable for pulse power applications and the power is 100 mW
Threshold Current:Min.:Typ.:25, Max:35 mA
VF:2.1 V Typ.
Slop Efficiency:1 W/A
Output Power: 100-120 mW
PCE:38-40 %
Wavelength:840-860 nm
Angle:17-23 deg
At 25 deg.QCW (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:300±10μm x 300±10μm
Die Thickness: 130±10μm
Number of Emitters：21
Back Electrode Size（Cathode Pad）:300±10μm x 300±10μm
*Customized key parameters are available, please feel free contact us.
850nm/200mW/0836/Die
PN:D-V0850M-0200-0836
Suitable for pulse power applications and the power is 200 mW
Threshold Current:Min.:40, Typ.:50, Max:60 mA
VF:2.1 V Typ.
Slop Efficiency:1 W/A
Output Power: 220-260 mW
PCE:40-45 %
Wavelength:840-860 nm
Angle:20-24 deg
At 25 deg.QCW (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:895±10μm x 200±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Bond Pad Size（Anode Pad): 862±5μm x 105±5μm
Back Electrode Size（Cathode Pad）:170±10μm x 170±10μm
*Customized key parameters are available, please feel free contact us.
850nm/300mW/14mil/Die
PN:D-V0850M-0300-0014
Suitable for pulse power applications and the power is 300 mW
Threshold Current:Min.:45, Typ.:55, Max:65 mA
VF:2.1 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 300-360 mW
PCE:40-46 %
Wavelength:840-860 nm
Angle:19-22 deg
At 25 deg.QCW (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:330±10μm x 330±10μm
Die Thickness: 130±10μm
Number of Emitters：48
Emitting Aperture: 10±1um
Bond Pad Size（Anode Pad): 98±3μm x 110±3μm
Back Electrode Size（Cathode Pad）:330±10μm x 330±10μm
*Customized key parameters are available, please feel free contact us.
850nm/400mW/0841/Die
PN:D-V0850M-0400-0841
Suitable for pulse power applications and the power is 400 mW
Threshold Current:Min.:60, Typ.:70, Max:90 mA
VF:2.25 V Typ.
Slop Efficiency:1.05 W/A
Output Power: 420-480 mW
PCE:38-42 %
Wavelength:840-860 nm
Angle:22-27 deg
At 25 deg.QCW (Pulse Width 0.1ms, 10% Duty Cycle )
Die size:1005±10μm x 230±10μm
Die Thickness: 130±10μm
Number of Emitters：22
Emitting Aperture： 20±1um
Bond Pad Size（Anode Pad): 972±5μm x 114±5μm
Back Electrode Size（Cathode Pad）:1005±10μm x 230±10μm
*Customized key parameters are available, please feel free contact us.
850nm/500mW/23mil/Die
PN:D-V0850M-0500-0023
Suitable for pulse power applications and the power is 500 mW
Threshold Current:Min.:90, Typ.:120, Max:160 mA
VF:2.1 V Typ.
Slop Efficiency:1 W/A
Output Power: 500-580 mW
PCE:38-40 %
Wavelength:840-860 nm
Angle:17-23 deg
At 25 deg.QCW (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:575±10μm x 555±10μm
Die Thickness: 130±10μm
Number of Emitters：95
Bond Pad Size（Anode Pad): 520±5μm x 100±5μm
Back Electrode Size（Cathode Pad）:575±10μm x 555±10μm
*Customized key parameters are available, please feel free contact us.
850nm/1W/29mil/Die
PN:D-V0850M-1000-0029
Suitable for CW power applications and the power is 1W
Threshold Current:Min.:200, Typ.:220, Max:250 mA
VF:2.3 V Typ.
Slop Efficiency:1.2 W/A
Output Power: 1000-1200 mW
PCE:39-42 %
Wavelength:840-860 nm
Angle:18-22 deg
Die size:725±10μm x 725±10μm
Die Thickness: 125±10μm
Number of Emitters：225
Bond Pad Size（Anode Pad): 650±5μm x 105±5μm
Back Electrode Size（Cathode Pad）:725±10μm x 725±10μm
*At 20 deg,CW model
*Customized key parameters are available, please feel free contact us.
850nm/1.5W/34mil/Die
PN:D-V0850M-1500-0034
Suitable for pulse power applications and the power is 1.5W
Threshold Current:Min.:280, Typ.:340, Max:420 mA
VF:2.2 V Typ.
Slop Efficiency:1 W/A
Output Power: 1500-1700 mW
PCE:36-38 %
Wavelength:840-860 nm
Angle:17-23 deg
At 25 deg.QCW (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:885±10μm x 810±10μm
Die Thickness: 150±10μm
Number of Emitters：280
Bond Pad Size（Anode Pad): 905±5μm x 830±5μm
Back Electrode Size（Cathode Pad）:855±10μm x 810±10μm
*Customized key parameters are available, please feel free contact us.
850nm/2W/40mil/Die
PN:D-V0850M-2000-0040
Suitable for pulse power applications and the power is 2 W
Threshold Current:Typ.:550, Max:700 mA
VF:2.2 V Typ.
Slop Efficiency:1 W/A
Output Power: 2-2.26 W
PCE:37-39 %
Wavelength:840-860 nm
Angle:18-24 deg
At 25 deg.QCW (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:995±10μm x 1020±10μm
Die Thickness: 150±10μm
Number of Emitters：410
Bond Pad Size（Anode Pad): 100μm*855μm*2
*Customized key parameters are available, please feel free contact us.
850nm/3W/43mil/Die
PN:D-V0850M-3000-0043
Suitable for pulse power applications and the power is 3 W
Threshold Current:Min.:Typ.:680, Max:800 mA
VF:2.3 V Typ.
Slop Efficiency:1 W/A
Output Power: 3.0-3.5 W
PCE:35-37 %
Wavelength:840-860 nm
Angle:17-23 deg
At 25 deg.QCW (Pulse Width 0.5ms, 1% Duty Cycle )
Die size:1075±10μm x 1120±10μm
Die Thickness: 150±10μm
Number of Emitters：624
Bond Pad Size（Anode Pad): 100±10μm x 1060±10μm x 2
Back Electrode Size（Cathode Pad）:1075±10μm x 1120±10μm
*Customized key parameters are available, please feel free contact us.
850nm/6W/56mil/Die
PN:D-V0850M-6000-0056
Suitable for pulse power applications and the power is 6 W
Threshold Current:Typ.:1500, Max:1800 mA
VF:2.2 V Typ.
Slop Efficiency:1 W/A
Output Power: 5-6 W
PCE:36-38 %
Wavelength:840-860 nm
Angle:18-23 deg
At 25 deg.QCW (Pulse Width 0.1ms, 3% Duty Cycle )
Die size:1340±10μm x 1500±10μm
Die Thickness: 150±10μm
Number of Emitters：1273
Bond Pad Size（Anode Pad): 1180±3μm x 105±3μm
Back Electrode Size（Cathode Pad）:1340±10μm x 1500±10μm
*Customized key parameters are available, please feel free contact us.
