Threshold Current:TYP. 4.6mA
VF:Typ. 2.7V
Output Power:Typ. 9mW
Wavelength:667nm-670nm
PCE:16%
Angle:23 deg
Die Size:170μm*170μm
Die Thickness:130μm
Number of Emitters:4
Bond Pad Size:87μm*85μm
Suitable for pulse power applications and the power is 4mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
Custom Wafer Level Parameters and Micro-nano Lens
VCSEL Chip and SMD, Affordable Price, Free Samples
A Leader in the VCSEL Laser Field
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