Threshold Current:TYP. 30mA
VF:Typ. 2.2V
Output Power:Typ. 120mW
Wavelength:800nm-816nm
PCE:40%
Angle:25 deg
Die Size:785μm*200μm
Die Thickness:130μm
Number of Emitters:22
Emitting Aperture:10μm
Bond Pad Size:752μm*108μm
Suitable for pulse power applications and the power is 100mW
25 ℃,QCW Mode (pulse length 0.1ms, 10% Duty Cycle )
Custom Wafer Level Parameters and Micro-nano Lens
VCSEL Chip and SMD, Affordable Price, Free Samples
A Leader in the VCSEL Laser Field
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