Threshold Current:TYP. 250mA
VF:Typ. 2.2V(IF=1.4A)
Output Power:Typ. 1200mW
Wavelength:840nm-860nm
PCE:39%
Angle:21 deg
Die Size:7755μm*670μm
Die Thickness:150μm
Number of Emitters:201
Bond Pad Size:645μm*100μm
Suitable for pulse power applications and the power is 1W
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
Custom Wafer Level Parameters and Micro-nano Lens
VCSEL Chip and SMD, Affordable Price, Free Samples
A Leader in the VCSEL Laser Field
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