Threshold Current:TYP. 5.5mA
VF:Typ. 2.0V(IF=28mA)
Output Power:Typ. 23mW
Wavelength:840nm-860nm
PCE:41%
Angle:21 deg
Die Size:170μm*170μm
Die Thickness:130μm
Number of Emitters:4
Bond Pad Size:87μm*85μm
Suitable for pulse power applications and the power is 20mW
25 ℃,QCW Mode (pulse length 0.5ms, 10% Duty Cycle )
Custom Wafer Level Parameters and Micro-nano Lens
VCSEL Chip and SMD, Affordable Price, Free Samples
A Leader in the VCSEL Laser Field
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