Threshold Current:TYP. 8mA
VF:Typ. 2.05V(IF=42mA)
Output Power:Typ. 34mW
Wavelength:840nm-860nm
PCE:41%
Angle:20 deg
Die Size:163μm*185μm
Die Thickness:130μm
Number of Emitters:6
Bond Pad Size:115μm*80μm
Suitable for pulse power applications and the power is 30mW
25 ℃,QCW Mode (pulse length 1ms, 10% Duty Cycle )
Custom Wafer Level Parameters and Micro-nano Lens
VCSEL Chip and SMD, Affordable Price, Free Samples
A Leader in the VCSEL Laser Field
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