Threshold Current:TYP. 120mA
VF:Typ. 2.1V(IF=0.7A)
Output Power:Typ. 580mW
Wavelength:840nm-860nm
PCE:40%
Angle:20 deg
Die Size:575μm*555μm
Die Thickness:150μm
Number of Emitters:95
Bond Pad Size:520μm*100μm
Suitable for pulse power applications and the power is 500mW
25 ℃,QCW Mode (pulse length 0.5ms, 1% Duty Cycle )
Custom Wafer Level Parameters and Micro-nano Lens
VCSEL Chip and SMD, Affordable Price, Free Samples
A Leader in the VCSEL Laser Field
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